dms3012sfg 30v n - channel enhancement mode mosfet with schottky diode powerdi ? product summary v (br)dss r ds(on) package i d t a = +25c 3 0v 10m ? @ v gs = 10v powerdi 3333- 8 12a 15m ? @ v gs = 4 .5v 9.5a description this mosfet is designed t o minimize on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? backlighting ? power management functions ? dc- dc converters features ? diof et utilizes a unique patented process to monolithically integrate a mosfet and a schottky in a single die to deliver: ? low r ds(on) ? minimize conduction losses ? low v sd ? reducing the losses due to body diode conduction ? low q rr ? lower q rr of the i ntegrate d schottky reduces body diode switching losses ? low gate capacitance (q g /q gs ) ratio ? reduces risk of shoot through or cross conduction currents at high frequencies ? small form factor thermally efficient package enables higher density end products ? occupies j ust 33% of the board area occupied by so - 8 , enabling smaller end product ? 100% uis (avalanche) rated ? 100% rg tested ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. ?green? device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: powerdi3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see diagram termin als: finish - matte tin annealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams (approximate) ordering information (note 4) part number case packaging dms3012sfg - 7 powerdi3333 - 8 2000 /tape & r eel dms3012sfg - 13 powerdi3333 - 8 3000 /tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com for more information about diodes incorporated?s definitions of haloge n - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http?//www.diodes.com/products/packages.html . bottom view 1 2 3 4 8 7 6 5 top view pin configuration internal schematic source gate drain s s s g d d d d pin 1 top view powerdi is a registered tr ademark of diodes incorporated. dms3012sfg document number: ds35441 rev. 8 - 2 1 of 8 www.diodes.com july 2014 ? diodes incorporated
dms3012sfg marking information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10v steady state t a = +25c t a = +70c i d 12 9.5 a t < 10s t a = +25c t a = +70c i d 16.0 12.7 a continuous drain current (note 6 ) v gs = 4.5 v steady state t a = +25c t a = +70c i d 9.5 7.5 a t < 10s t a = +25c t a = +70c i d 13.0 10.3 a pulsed drain curren t ( 10 thermal characteristics characteristic symbol value units total power dissipation (note 5 ) t a = +25c p d 0.89 w t a = + 70 c 0.55 thermal resistance, junction to ambient (note 5 ) s teady state r ja 145 c/w t < 10s 74 total power dissipation (note 6 ) t a = +25c p d 2.2 w t a = + 70 c 1.3 thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 58 c/w t < 10s 31 thermal resistance, junction to case (note 6 ) r n12 y y w w powerdi is a registered tr ademark of diodes incorporated. dms3012sfg document number: ds35441 rev. 8 - 2 2 of 8 www.diodes.com july 2014 ? diodes incorporated
dms3012sfg 0.1 1 10 100 -v , drain-source voltage (v) fig. 1 soa, safe operation area ds 0.01 0.1 1 10 100 - i , d r a i n c u r r e n t ( a ) d t1, pulse duration time (sec) fig. 2 single pulse maximum power dissipation 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 10 100 1,000 single pulse r = 61 c/w r = r * r t - t = p * r ? ja ja(t) (t) ja j a ja(t) 0.0001 p , p e a k t r a n s i e n t p o i w e r ( w ) ( p k ) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 1 r ( t ), t r a n si en t t h e r m a l r e si st an c e r = r * r ja(t) (t) ja ja r = 61 c/w duty cycle, d = t1/t2 www.diodes.com july 2014 ? diodes incorporated
dms3012sfg electrical characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a ? 100 a ? 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1.0 1.5 2. 5 v v ds = v gs , i d = 250 a 7.3 10 m v gs = 10 v, i d = 1 3.5 a ? 10 1 5 v gs = 4.5 v, i d = 1 1 a forward transfer admittance |y fs | ? 30 ? s v ds = 5 v, i d = 1 0. 0 a diode forward voltage v sd ? 0. 45 0.5 5 v v gs = 0v, i s = 1a dynamic characteristics (note 9 ) input capacitance c iss ? 1296 4310 pf v ds = 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? 415 ? pf reverse transfer capacitance c rss ? 204 ? pf gate resistance r g 0.26 1.6 2. 6 ? 14.7 ? nc v d s = 15 v, v gs = 10v , i d = 13.5 a total gate charge v gs = 10v q g ? 31.6 ? nc gate - source charge q gs ? 3.5 ? nc gate - drain charge q gd ? 5.0 ? nc turn - on delay time t d(on) ? 15 .8 ? ns v gs = 10 v, v ds = 15v, r g = 3 , i d = 8.8 a turn - on rise time t r ? 27.8 ? ns turn - off delay time t d(off) ? 29.7 ? ns turn - off fall time t f ? 13 .6 ? ns reverse recovery time t rr ? 13.1 ? ns i f = 1 3.5 a, di/dt = 100a/s 4.3 ? n c i f = 1 3.5 a, di/dt = 1 00a/s www.diodes.com july 2014 ? diodes incorporated
dms3012sfg 0 10 20 15 25 30 fig. 6 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 5 0.05 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.04 0.01 0.02 0.03 v = 2.5v gs v = 4.5v gs v = 10v gs 0 5 10 15 20 25 30 i , drain current (a) d fig. 7 typical on-resistance vs. drain current and temperature r , d r ai n - so u r c e o n - r esi s t a n c e ( ) d s ( o n ) ? ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s o n ? 0.02 v = 10v i = 10a gs d v = 10v i = 5a gs d fig. 10 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.5 1.0 1.5 2.0 2.5 3.0 v , g a t e t h r e sh o l d vo l t ag e ( v) g s ( t h ) i = 1ma d i = 250a d 0 5 10 15 20 25 30 0 0.4 0.6 0.8 1.0 1.2 fig. 11 diode forward voltage vs. current v , source-drain voltage (v) sd 0.2 i , s o u r c e c u r r en t (a ) s t = 25c a powerdi is a registered tr ademark of diodes incorporated. dms3012sfg document number: ds35441 rev. 8 - 2 5 of 8 www.diodes.com july 2014 ? diodes incorporated
dms3012sfg 0 5 10 15 20 1,000 10,000 c , c a p a c i t a n c e (p f ) 100 fig. 12 typical total capacitance v , drain-source voltage (v) ds c iss c rss c oss f = 1mhz 0 10 20 30 fig. 13 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 10,000 i , l eak ag e c u r r en t (a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a 0 2 4 6 8 10 0 5 10 15 20 25 30 35 q , otal gate charge (nc) fig. 14 gate-source voltage vs. total gate charge g t v , a t e - s o u r c e vo l t ag e ( v) g s g v = 15v i = 13.5a ds d powerdi is a registered tr ademark of diodes incorporated. dms3012sfg document number: ds35441 rev. 8 - 2 6 of 8 www.diodes.com july 2014 ? diodes incorporated
dms3012sfg package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest v ersion. powerdi3333 - 8 dim min max typ d 3.25 3.35 3.30 e 3.25 3.35 3.30 d2 2.22 2.32 2.27 e2 1.56 1.66 1.61 a 0.75 0.85 0.80 a1 0 0.05 0 .02 a3 ? ? b 0.27 0.37 0.32 b2 ? ? l 0.35 0.45 0.40 l1 ? ? e ? ? z ? ? all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 g1 0.420 y 3.700 y1 2.250 y2 1.850 y3 0.700 x 2.370 x2 0.42 0 a a1 a3 d d2 e e2 b2 (4x) l (4x) l1 (3x) b (8x) e z (4x) pin 1 id 1 4 8 5 x y y1 y3 y2 x2 c 1 4 8 5 g g1 powerdi is a registered tr ademark of diodes incorporated. dms3012sfg document number: ds35441 rev. 8 - 2 7 of 8 www.diodes.com july 2014 ? diodes incorporated
dms3012sfg important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this docume nt, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modification s, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product de scribed herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any produ cts purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united stat es, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support dev ices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or su stain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and reg ulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in su ch safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives ag ainst any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.diodes.com powerdi is a registered tr ademark of diodes incorporated. dms3012sfg document number: ds35441 rev. 8 - 2 8 of 8 www.diodes.com july 2014 ? diodes incorporated
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